Transverse spin-orbit force in the spin Hall effect in ballistic semiconductor wires
نویسندگان
چکیده
We introduce the spinand momentum-dependent force operator, which is defined by the Hamiltonian of a clean semiconductor quantum wire with homogeneous Rashba spin-orbit SO coupling attached to two ideal i.e., free of spin and charge interactions leads. Its expectation value in the spin-polarized electronic wave packet injected through the leads explains why the center of the packet gets deflected in the transverse direction. Moreover, the corresponding spin density will be dragged along the transverse direction to generate an out-of-plane spin accumulation of opposite signs on the lateral edges of the wire, as expected in the phenomenology of the spin Hall effect, when spin-↑ and spin-↓ polarized packets mimicking the injection of conventional unpolarized charge current propagate simultaneously through the wire. We also demonstrate that spin coherence of the injected spin-polarized wave packet will gradually diminish thereby diminishing the “force” along the SO coupled wire due to the entanglement of spin and orbital degrees of freedom of a single electron, even in the absence of any impurity scattering.
منابع مشابه
Mesoscopic spin Hall effect in multiprobe ballistic spin-orbit-coupled semiconductor bridges
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas 2DEG in semiconductor heterostructure will induce a pure spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit SO coupling and, moreover, it is resilient...
متن کاملNonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures.
We demonstrate that the flow of a longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce a nonequilibrium spin accumulation which has opposite signs for the two lateral edges and is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-pl...
متن کاملQuantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کاملSpin Hall current driven by quantum interferences in mesoscopic Rashba rings.
We propose an all-electrical nanostructure where pure spin current is induced in the transverse voltage probes attached to a quantum-coherent ballistic one-dimensional ring when unpolarized charge current is injected through its longitudinal leads. Tuning of the Rashba spin-orbit coupling in a semiconductor heterostructure hosting the ring generates quasiperiodic oscillations of the predicted s...
متن کاملInverse spin Hall effect and anomalous Hall effect in a two-dimensional electron gas
We study the coupled dynamics of spin and charge currents in a two-dimensional electron gas in the transport diffusive regime. For systems with inversion symmetry there are established relations between the spin Hall effect, the anomalous Hall effect and the inverse spin Hall effect. However, in two-dimensional electron gases of semiconductors like GaAs, inversion symmetry is broken so that the...
متن کامل